Repair process for aluminum nitride substrates
AssigneeInternational Business Machines Corporation
InventorsDavid B. Goland, Mark J. LaPlante, David C. Long, Dale C. McHerron, Krishna G. Sachdev, Subhash L. Shinde
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Abstract
A method to repair Aluminum Nitride (AlN) substrates is disclosed wherein a frequency doubled Q-switched Nd:YAG laser is used to remove unwanted metallurgy. The substrate is place in a liquid filled work chamber which acts to prevent metallic species of AlN from forming. The repair site can be sealed with a novel polymer coating to prevent contamination or corrosion. Repairs can be made to buried or surface metallurgy.
Claims24
A method of removing surface metallurgy on an aluminum nitride substrate comprising the steps of:
- (a) providing a liquid filled chamber having an optical window;
- (b) providing an aluminum nitride substrate having surface metallurgy in need of removal;
- (c) placing said substrate inside said chamber;
- (d) providing a laser energy source;
- (e) applying said laser energy source through said optical window to remove said surface metallurgy on said substrate;
- (f) forming a repair area where said surface metallurgy has been removed;
- (g) sealing said repair area by applying to the repair area a polymer having the structure
- wherein X is selected from the group consisting of O, C(CF3)2, and CO, and wherein Y is C(CF3)2, and curing the polymer.
A method of repairing an aluminum nitride substrate comprising the steps of:
- (a) providing a liquid filled work chamber;
- (b) providing an aluminum nitride substrate having metallization;
- (c) placing said substrate inside said chamber;
- (d) removing a portion of said metallization of said substrate and forming a repair area, wherein said liquid filled work chamber sufficiently cools said substrate, and said repair area is substantially free from elemental aluminum;
- (e) filling said repair area with an insulating polymer comprising a polyimide material having the structure
- wherein X is selected from the group consisting of O, C(CF3)2, and CO, and wherein Y is C(CF3)2;
- and
- (f) heat curing the insulating polymer to passivate and seal the repair area.
A method of repairing an aluminum nitride substrate comprising the steps of:
- (a)providing an aluminum nitride substrate having at least one microelectronic device;
- (b)immersing said substrate in a liquid;
- (c)machining a portion of the microelectronic device while said substrate is immersed to form a repair area;
- and
- (d)sealing said repair area with a polymer, said polymer having the structure
- wherein X is selected from the group consisting of O, C(CF3)2, and CO, and wherein Y is C(CF3)2.
A method of repairing an aluminum nitride substrate comprising:
- providing an aluminum nitride substrate in need of repair;
- providing a laser energy source;
- immersing in a liquid at least a portion of an area of the aluminum nitride substrate in need of repair;
- emitting said laser energy through said liquid over the portion of the aluminum nitride substrate in need of repair;
- forming a repair area over the portion of the aluminum nitride substrate in need of repair, wherein immersing the aluminum nitride substrate in a liquid sufficiently cools the substrate when emitting said laser energy over the portion of the aluminum nitride substrate in need of repair such that said repair area is substantially free from elemental aluminum;
- filling the repair area with a flexible chain polyimide material derived from non-rigid dianhydrides and aromatic diamines having at least one hexafluoroisopropylidene functionality;
- and
- heating the repair area to cure the polyimide material and passivate and seal the repair area.
Dependencies are inferred from the claim text.