US 6,261,938 B1 · Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography

Abstract

A method for fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material comprises the step of depositing onto the substrate a layer of metal capable of reacting with the semiconductor material to form etch-resistant metal/semiconductor compound, and the step of producing a focused electron beam. The focused electron beam is applied to the layer of metal to locally heat the metal and semiconductor material and cause diffusion of the metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound. The focused electron beam is displaced onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound. Finally, the layer of metal is wet etched to leave on the substrate only the structure of metal/semiconductor compound. Following wet etching of the layer of metal, an oxygen plasma etch can be conducted to remove a carbon deposit formed at the surface of the structure of etch-resistant metal/semiconductor compound. Also, the substrate may be subsequently etched to remove a thin layer of metal rich semiconductor material formed at the surface of the substrate by reaction, at room temperature, of the metal and semiconductor material with each other.

Claims38

Dependent claims

A method for fabricating a structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material, comprising the steps of:

depositing onto the substrate a layer of metal capable of reacting with said semiconductor material to form etch-resistant metal/semiconductor compound;
producing a focused electron beam;
applying the focused electron beam to the layer of metal to locally heat said metal and semiconductor material and cause diffusion of said metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound;
displacing the focused electron beam onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound;
and
wet etching the layer of metal to leave on the substrate only the structure of etch-resistant metal/semiconductor compound.

3 more elements

A method for fabricating a structure of etch-resistant metal/semiconductor compound on a substrate, comprising the steps of:

depositing onto the substrate a layer of semiconductor material;
depositing onto the layer of semiconductor material a layer of metal capable of reacting with said semiconductor material to form etch-resistant metal/semiconductor compound;
producing a focused electron beam;
applying the focused electron beam to the layer of metal to locally heat said metal and semiconductor material and cause diffusion of said metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound;
displacing the focused electron beam onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound;
wet etching the layer of metal to leave on the layer of semiconductor material only the structure of etch-resistant metal/semiconductor compound;
and
plasma etching the layer of semiconductor material to leave on the substrate only the structure of etch-resistant metal/semiconductor compound.

5 more elements

A method for fabricating a structure of etch-resistant metal/semiconductor compound on a substrate, comprising the steps of:

depositing onto the substrate a layer of metal;
depositing onto the layer of metal a layer of semiconductor material capable of reacting with said metal to form etch-resistant metal/semiconductor compound;
producing a focused electron beam;
applying the focused electron beam to the layer of semiconductor material to locally heat said semiconductor material and said metal and cause diffusion of said meal and semiconductor material in each other to form etch-resistant metal/semiconductor compound;
displacing the focused electron beam onto the layer of semiconductor material to form the structure of etch-resistant metal/semiconductor compound;
plasma etching the semiconductor material to leave on the layer of metal only the structure of etch-resistant metal/semiconductor compound;
and
wet etching the layer of metal to leave on the substrate only the structure of etch-resistant metal/semiconductor compound.

5 more elements

Dependencies are inferred from the claim text.

Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography

Life of this patent

Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography

Life of this patent

Abstract

Claims38