Solid state imaging device and manufacturing method thereof
AssigneeSony Corporation
InventorMasao Kimura
Life of this patent
Estimating the term…
Abstract
A solid state imaging device with a high sensitivity is obtained by introducing an incident light to be incident on a light receiving portion widely. In the solid state imaging device, a layer (8) having a concave lens structure is provided in a portion from a sensor opening to an upper most surface layer and a well-shaped dug structure (21) is provided at a bottom portion of the concave lens structure.
Claims15
A solid state imaging device, comprising:
- a sensor having a light receiving portion;
- a layer above said sensor in a direction towards which light enters said sensor, said layer having
- an uppermost surface in a direction away from said sensor,
- a concave lens structure on said uppermost surface provided above said light receiving portion of said sensor, said concave lens structure having a bottom portion at a center point on said uppermost surface and
- a well-shaped dug structure located at said bottom portion of said concave lens structure.
A solid state imaging device, comprising:
- a semiconductor substrate having a light receiving portion formed in said semiconductor substrate;
- a gate insulating film formed on top of said semiconductor substrate;
- a transfer electrode formed on top of said gate insulating film, said transfer electrode not covering said light receiving portion
- a light shielding film formed on top of said transfer electrode and on top of said light receiving portion, said light shielding film having an opening above said light receiving portion;
- an inter-layer insulating layer covering said light receiving portion, having an uppermost surface in a direction away from said semiconductor substrate;
- and
- a well-shaped dug structure in said uppermost surface of said inter-layer insulating layer located above said light receiving portion, but not extending over said opening in said light shielding film.
A method of manufacturing a solid state imaging device, comprising steps of:
- forming a light receiving portion for photoelectric-converting an incident light into a signal charge and a charge transfer portion for transferring said signal charge from said light receiving portion in a semiconductor substrate;
- forming a gate insulating film on a surface of said semiconductor substrate;
- forming a transfer electrode on said gate insulating film and above said charge transfer portion;
- forming a light shielding film to cover said transfer electrode;
- then, forming an opening in said light shielding film at its portion corresponding to said light receiving portion;
- depositing an inter-layer insulating film to cover said light shielding film and said opening of said light receiving portion;
- then, forming a concave portion above said light receiving portion by treating said inter-layer insulating film;
- after patterning said inter-layer insulating layer, forming a well structure by vertically digging a most recessed portion of said concave portion through an anisotropic etching;
- and
- burying said well structure by a high refractive index layer.
A method for manufacturing a solid state imaging device as claimed in 12, wherein said treatment of said inter-layer insulating layer is a reflow treatment.
Dependencies are inferred from the claim text.