AMR read sensor structure and method with high magnetoresistive coefficient

Abstract

A magnetic read element for use in magnetic data retrieval includes a NiFeCr seed layer and an electrically insulating spacer layer between an MR stripe and a soft adjacent layer formed of, for example, NiFeRh. The magnetic read element includes a magnetoresistive stripe and a seed layer formed of NiFeCr that is interfacially adjacent the magnetoresistive stripe. The read element also includes a spacer layer adjacent the seed layer, with the seed layer being disposed between the magnetoresistive stripe and the spacer layer. The spacer layer is formed of an electrically insulating material. In addition, a soft adjacent layer is included in the read element, adjacent the seed layer and formed of a low-coercivity, high-permeability magnetic material. The spacer layer can be formed of Ta, while the soft adjacent layer can be formed of NiFeRh. The magnetic read element can be incorporated in a read/write head, and further incorporated in a read/write system for data retrieval. A method of the present invention includes providing a substrate, forming a soft adjacent layer of low-coercivity, high-permeability material above the substrate, forming a spacer layer of electrically insulating material above the soft adjacent layer, forming a seed layer of NiFeCr above the spacer layer, and forming a magnetoresistive stripe above and interfacially adjacent the seed layer.

Dependencies are inferred from the claim text.