Semiconductor phase modulator
AssigneeAlcatel
InventorChristian Duchet
Life of this patent
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Abstract
A semiconductor phase modulator comprises a lower cladding layer, an active waveguide and an upper cladding layer, deposited successively on a substrate made of III-V material. The active waveguide comprises at least one first active layer having a first photoluminescence wavelength and one second active layer of compensation having a second photoluminescence wavelength. The operating wavelength of the modulator is higher than the first photoluminescence wavelength by a value ranging from 80 to 200 nm, and it is greater than the second photoluminescence wavelength by a value of over 300 nm.
Claims5
A semiconductor phase modulator having a structure comprising successively a lower cladding layer, an active waveguide and an upper cladding layer, deposited on a substrate made of III-V material, wherein the active waveguide comprises at least one first active layer and one second active layer of compensation, said first active layer having a first photoluminescence wavelength, said second layer of compensation having a second photoluminescence wavelength, wherein said modulator works with an operating wavelength that is higher than said first photoluminescence wavelength by a value ranging from 80 to 200 nm, and wherein said operating wavelength is greater than said second photoluminescence wavelength by a value of over 300 nm.
Dependencies are inferred from the claim text.