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US 6,256,328 B1Granted
Multiwavelength modelocked semiconductor diode laser
AssigneeUniversity of Central Florida
InventorsPeter J. Delfyett, Hong Shi
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AssigneeUniversity of Central Florida
InventorsPeter J. Delfyett, Hong Shi
Estimating the term…
Single-stripe GaAs/AlGaAs semiconductor optical amplifiers which simultaneously generates from four to more than twenty tunable WDM channels. A four channel version transmits approximately 12 picosecond pulses at approximately 2.5 GHz for an aggregate pulse rate of 100 GHz. Wavelength tuning over 18 nm has been demonstrated with channel spacing ranging from approximately 0.8 nm to approximately 2 nm. A second version uses approximately 20 wavelength channels, each transmitting approximately 12 picosecond pulses at a rate of approximately 600 MHz. A spectral correlation across the multiwavelength spectrum which can be for utilizing single stripe laser diodes as multiwavelength sources in WDM-TDM networks. A third version of multiple wavelength generation uses a fiber-array and grating. And a fourth version of wavelength generation uses a Fabry-Perot Spectral filter. Also solid state laser sources and optical fiber laser sources can be used.
A multiwavelength laser source generation device, the device having a single-stripe semiconductor diode laser source, means for actively modelocking the diode laser source, and means for simultaneously generating at least four tunable separate modelocked wavelengths from the diode laser source, the improvement comprising:
A multiwavelength laser source generating device, the device having a single laser source, means for actively modelocking the single laser source, the means for modelocking includes an rf source having a frequency of approximately 2.5 GHz to approximately 600 MHz and a bias source, the rf source and the bias source being injected into the single laser source, means for simultaneously generating at least four tunable separate modelocked wavelengths from the single laser source, the improvement comprising:
A method of generating modelocked multiwavelengths from a device, the device having the steps of modelocking a single laser source within the device by injecting the single laser source with an rf source having a frequency of approximately 2.5 GHz to approximately 600 MHz and a bias source, and generating simultaneously at least four tunable separate modelocked wavelengths from the device, the improved method comprising the steps of:
Dependencies are inferred from the claim text.