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AssigneeSandia Corporation
InventorsSteven R. Kurtz, Andrew A. Allerman, John F. Klem, Eric D. Jones
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An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition InxGa1−xAs1−yNy with 0<x≦0.2 and 0<y≦0.04 and a p-type GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.
A semiconductor p-n heterojunction for use in a multi-junction solar cell, comprising a layer of indium gallium arsenide nitride (InGaAsN) with n-type doping, at least in part, in contact with a layer of gallium arsenide (GaAs) with p-type doping.
A photodetector comprising:
Dependencies are inferred from the claim text.