Semiconductor device having crystalline silicon clusters
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A semiconductor device having a plurality of crystalline silicon clusters. The semiconductor device is formed on an insulating surface and includes crystalline silicon clusters anchored with each other with substantially no grain boundary therebetween.
Claims24
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween,
- wherein said semiconductor layer has a mobility in the range of 10 to 200 cm2/V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm2/V·sec in the case of an electron mobility.
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween,
- wherein said semiconductor layer has a mobility in the range of 10 to 200 cm2/V·sec in the case of a hole mobility and a mobility in the range of 15 to 300 cm2 V·sec in the case of an electron mobility.
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween,
- wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side from 522 cm−1.
A semiconductor device having at least a semiconductor layer formed on an insulating surface, said semiconductor layer comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween
- wherein said semiconductor layer exhibits a Raman peak which is shifted to a lower frequency side frog 522 cm−1.
A thin film transistor comprising:
- a semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween;
- a gate insulating film on said semiconductor layer;
- and
- a gate electrode on said gate insulating film.
A thin film transistor comprising:
- A semiconductor island on an insulating surface, said semiconductor island comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween;
- a gate insulating film on said semiconductor layer;
- and
- a gate electrode on said gate insulating film.
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising:
- A semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions,
- a gate insulating film on said semiconductor layer;
- and
- a gate electrode on said gate insulating film,
- wherein said channel region comprises a plurality of crystalline silicon clusters at least a part of which are anchored with each other through substantially no grain boundary therebetween.
A CMOS device having at least two thin film transistors, each of said thin film transistors comprising:
- a semiconductor island formed on an insulating surface, said semiconductor island comprising source and drain regions, and a channel region located between said source and drain regions,
- a gate insulating film on said semiconductor layer;
- and
- a gate electrode on said gate insulating film,
- wherein said channel region comprising a plurality of crystalline silicon clusters anchored with each other through substantially no grain boundary therebetween.
Dependencies are inferred from the claim text.