Bulk and strained silicon on insulator using local selective oxidation
AssigneeInternational Business Machines Corporation
InventorsJack Oon Chu, Khalid Ezzeldin Ismail, Kim Yang Lee, John Albrecht Ott
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Abstract
A method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.
Claims20
A structure for forming an electronic device therein comprising:
- a single crystal silicon containing substrate,
- a first epitaxial layer selected from the group consisting of
- Si1−xGex and (Si(1−x)Gex)aC1−a on the upper surface of said substrate,
- a second single crystal layer containing silicon on said first epitaxial layer, and
- first and second oxide regions spaced apart, each said first epitaxial and second oxide regions extending in said first epitaxial layer below said second single crystal layer.
Dependencies are inferred from the claim text.