Method of growing thin film electroluminescent structures
AssigneePlanar Systems, Inc.
InventorsGitte Härkönen, Tomi Kervinen, Erkki Soininen, Runar Törnqvist, Kirsi Vasama, Mario Glanz, Herbert Schumann
Life of this patent
Estimating the term…
Abstract
The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadienyl type cerium compounds can be used as ALE precursors at about 400° C. substrate temperatures without any observable thermal decomposition during processing.
Claims18
A method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy -method, comprising using an organometallic cerium compound containing at least one cyclopentadienyl type ligand as a precursor for the dopant cerium.
A process for growing a light-emitting thin film electroluminescent component with a cerium-doped phosphor layer on a substrate by the Atomic Layer Epitaxy-method using volatile compounds as precursors for the cerium-doped phosphor layer comprising
- providing a substrate;
- forming a first set of electrodes on said substrate;
- forming a first insulator layer on said electrodes;
- growing a phosphor layer on said first insulator layer;
- doping said phosphor layer with cerium using an organometallic cerium compound comprising at least one cyclopentadienyl type ligand;
- forming a second insulator layer on said phosphor layer;
- and
- forming a second set of electrodes on said second insulator layer.
A method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method, comprising using an organometallic cerium compound containing at least one cyclopentadienyl type ligand as a precursor for the dopant cerium, wherein the Ce precursor is selected from tetramethyl- and isopropyl-substituted Ce-tricyclopentadienyl compounds.
A process for growing a light-emitting thin film electroluminescent component with a cerium-doped phosphor layer on a substrate by the Atomic Layer Epitaxy-method using volatile compounds as precursors for the cerium-doped phosphor layer comprising
- providing a substrate;
- forming a first set of electrodes on said substrate;
- forming a first insulator layer on said electrodes;
- growing a phosphor layer on said first insulator layer;
- doping said phosphor layer with cerium using an organometallic cerium compound selected from tetramethyl- and isopropyl-substituted Ce-tricyclopentadienyl compounds;
- forming a second insulator layer on said phosphor layer;
- and
- forming a second set of electrodes on said second insulator layer.
Dependencies are inferred from the claim text.