Memory using insulator traps
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Joseph E. Geusic
Life of this patent
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Abstract
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density of the point defect trap sites, more uniform step changes in drain current are obtained as single electrons are stored on or removed from respective trap sites. By also adjusting the trapping energy of the point defect trap sites, the memory cell provides either volatile data storage, similar to a dynamic random access memory (DRAM), or nonvolatile data storage, similar to an electrically erasable and programmable read only memory (EEPROM). The memory cell is used for storing binary or multi-state data.
Claims18
A method of storing and retrieving data, the method comprising:
- altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator;
- and
- detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
A method of storing and retrieving data, the method comprising:
- altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator and wherein the trap sites are capable of capturing no more than one electron;
- and
- detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
Dependencies are inferred from the claim text.