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AssigneeRohm Co., Ltd.
InventorsAkira Kamisawa, Norifumi Fujimura
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A ferroelectric material having a basic structure of ReMnO3, said ferroelectric material comprises Re and Mn one of which is contained in excess of the other to a limit of 20 at. % or the ferroelectric material is further added with a 4-valence element. Also, a method of forming a ferroelectric material, comprises decreasing an oxygen partial pressure within a growth reactor such as a vacuum deposition reactor, and forming a film on a film-forming surface of a substrate (4) while blowing an oxidizing source thereto. This structure provides a ferroelectric material low in leak current and improved in ferroelectric characteristics. Where using the material for a semiconductor memory device, its characteristics can be improved.
A ferroelectric material having a basic structure of REMnO3 wherein, said REMnO3 ferroelectric material is doped with at least one of a 4-valence element and La or part of RE is substituted by at least one of a 4-valence element and La;
A semiconductor memory device, having a ferroelectric film on a semiconductor substrate surface side, wherein said ferroelectric film comprises a basic structure of REMnO3 doped with at least one of a 4-valence element and La;
Dependencies are inferred from the claim text.