Thermal processing jig for use in manufacturing semiconductor devices and method of manufacturing the same

Abstract

A thermal processing jig 1 made from quartz for use in manufacturing semiconductor devices is provided, which may effectively prevent deposition of contaminating metals on the semiconductor devices during heat treatments thereof, and a method of manufacturing such jig in the form having a good structure for fabrication. The thermal processing jig 1 is designed to support silicon wafers 2 during heat treatments thereof. The body of the jig is made from a first type of quartz 8 having high heat resistance such as electric fusion quartz, while those portions of the jig coming adjacent to said silicon wafers 2 are made from a second type of quartz 7 such as oxyhydrogen flame fusion quartz and synthetic quartz which contains only a small amount of metal impurities and does not liberate metal impurities appreciably during the heat treatments. Alternatively, the body of the thermal processing jig 1 may be made from highly refractory oxyhydrogen flame fusion quartz, while the section adjacent the silicon wafer 2 may be made from synthetic quartz containing less contaminating impurity metals. The silicon wafer 2 is separated from the electric fusion quartz and oxyhydrogen flame fusion quartz at a predetermined distance g.

Dependencies are inferred from the claim text.