# US 6,243,155 B1 · Electronic display device having an active matrix display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,243,155 B1 - Document ID: US6243155B1 - Status: Granted - Kind: B1 - Application number: 09/174,468 - Filed: 1998-10-19 - Granted: 2001-06-05 - Earliest claimed: 1997-10-20 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hongyong Zhang; Masayuki Sakakura; Hideaki Kuwabara - Web page: https://patentgrep.com/patent/US6243155B1 ## CPC - H04N 1/00129: {with a display device, e.g. CRT or LCD monitor (with a television apparatus H04N1/00283; arrangements for control of display devices G09G)} - G02F 1/135: Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied {(G02F1/133348 takes precedence)} - G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer} - G02F 1/13624: {having more than one switching element per pixel} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - H04N 1/00127: {Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture} - H04N 1/028: for picture information pick-up - H04N 1/02805: {with photodetectors arranged in a two-dimensional array} - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10F 39/191: {Photoconductor image sensors} - G02F 1/13312: {Circuits comprising photodetectors for purposes other than feedback} - G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)} - G02F 1/13629: {Multilayer wirings} - H04M 1/0264: {for a camera module assembly} - H04M 1/0266: {for a display module assembly} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04M: TELEPHONIC COMMUNICATION (circuits for controlling other apparatus via a telephone cable and not involving telephone switching apparatus G08) ## Abstract A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact. ## Claims ### Claim 1 An electronic device having at least one liquid crystal panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film;, a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element; and a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 2 (depends on 1) An electronic device according to claim 1 wherein said first and second thin film transistors are formed in a same level. ### Claim 3 (depends on 1) An electronic device according to claim 1 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 4 (depends on 1) An electronic device according to claim 1 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 5 (depends on 1) An electronic device according to claim 1 wherein said electronic device is a still camera. ### Claim 6 (depends on 1) An electronic device according to claim 1 wherein said electronic device is a portable phone. ### Claim 7 An electronic device having at least one active matrix display panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film; a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element; and a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 8 (depends on 7) An electronic device according to claim 7 wherein said first and second thin film transistors are formed in a same level. ### Claim 9 (depends on 7) An electronic device according to claim 7 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 10 (depends on 7) An electronic device according to claim 7 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 11 (depends on 7) An electronic device according to claim 7 wherein said electronic device is a still camera. ### Claim 12 (depends on 7) An electronic device according to claim 7 wherein said electronic device is a portable phone. ### Claim 13 An electronic device having at least one active matrix display panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel wherein light shielding films are disposed between said transparent substrate and said first and second thin film transistors; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film; a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element; and a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 14 (depends on 13) An electronic device according to claim 13 wherein said first and second thin film transistors are formed in a same level. ### Claim 15 (depends on 13) An electronic device according to claim 13 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 16 (depends on 13) An electronic device according to claim 13 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 17 (depends on 13) An electronic device according to claim 13 wherein said electronic device is a still camera. ### Claim 18 (depends on 13) An electronic device according to claim 13 wherein said electronic device is a portable phone. ### Claim 19 (depends on 13) An electronic device according to claim 13 wherein said display panel is a liquid crystal display panel. ### Claim 20 An electronic device having at least one active matrix display panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film; a second interlayer insulating film comprising an organic resin film formed over said first interlayer insulating film and said photoelectric conversion element wherein said second interlayer insulating film has a leveled upper surface; and a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 21 (depends on 20) An electronic device according to claim 20 wherein said first and second thin film transistors are formed in a same level. ### Claim 22 (depends on 20) An electronic device according to claim 20 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 23 (depends on 20) An electronic device according to claim 20 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 24 (depends on 20) An electronic device according to claim 20 wherein said electronic device is a still camera. ### Claim 25 (depends on 20) An electronic device according to claim 20 wherein said electronic device is a portable phone. ### Claim 26 (depends on 20) An electronic device according to claim 20 wherein said display panel is a liquid crystal display panel. ### Claim 27 An electronic device having at least one active matrix display panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors wherein said first interlayer insulating film comprises an organic resin film to provide a leveled upper surface thereon; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film; a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element; and a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 28 (depends on 27) An electronic device according to claim 27 wherein said first and second thin film transistors are formed in a same level. ### Claim 29 (depends on 27) An electronic device according to claim 27 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 30 (depends on 27) An electronic device according to claim 27 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 31 (depends on 27) An electronic device according to claim 27 wherein said electronic device is a still camera. ### Claim 32 (depends on 27) An electronic device according to claim 27 wherein said electronic device is a portable phone. ### Claim 33 (depends on 27) An electronic device according to claim 27 wherein said display panel is a liquid crystal display panel. ### Claim 34 An electronic device having at least one active matrix display panel, said panel comprising: a substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first electrode, and a second electrode formed on the photosensitive semiconductor film; a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element; and a pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 35 (depends on 34) An electronic device according to claim 34 wherein said first and second thin film transistors are formed in a same level. ### Claim 36 (depends on 34) An electronic device according to claim 34 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 37 (depends on 34) An electronic device according to claim 34 wherein said photoelectric conversion element is located under said pixel electrode. ### Claim 38 (depends on 34) An electronic device according to claim 34 wherein said electronic device is a still camera. ### Claim 39 (depends on 34) An electronic device according to claim 34 wherein said electronic device is a portable phone. ### Claim 40 An electronic device having at least one active matrix display panel, said panel comprising: a substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a first interlayer insulating film covering said first and second thin film transistors; a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first electrode, and a second electrode formed on the photosensitive semiconductor film; a second interlayer insulating film comprising an organic resin film formed over said first interlayer insulating film and said photoelectric conversion element wherein said second interlayer insulating film has a leveled upper surface; and a pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 41 (depends on 40) An electronic device according to claim 40 wherein said first and second thin film transistors are formed in a same level. ### Claim 42 (depends on 40) An electronic device according to claim 40 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 43 (depends on 40) An electronic device according to claim 40 wherein said photoelectric conversion element is located under said pixel electrode. ### Claim 44 (depends on 40) An electronic device according to claim 40 wherein said electronic device is a still camera. ### Claim 45 (depends on 40) An electronic device according to claim 40 wherein said electronic device is a portable phone. ### Claim 46 (depends on 40) An electronic device according to claim 40 wherein said display panel is a liquid crystal display panel. ### Claim 47 An electronic device having at least one active matrix display panel, said panel comprising: a transparent substrate having at least one pixel; a first thin film transistor and a second thin film transistor disposed in said at least one pixel; a photoelectric conversion element formed over said substrate and electrically connected to said first thin film transistor wherein said photoelectric conversion element comprises a first transparent electrode, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film so that light entered through said transparent substrate is received by said photoelectric conversion element; an interlayer insulating film formed over said photoelectric conversion element, and said first and second thin film transistors; and a light reflective pixel electrode formed on said interlayer insulating film and electrically connected to said second thin film transistor. ### Claim 48 (depends on 47) An electronic device according to claim 47 wherein said first and second thin film transistors are formed in a same level. ### Claim 49 (depends on 47) An electronic device according to claim 47 wherein said first and second thin film transistors have a same cross sectional structure. ### Claim 50 (depends on 47) An electronic device according to claim 47 wherein said photoelectric conversion element is located under said light reflective pixel electrode. ### Claim 51 (depends on 47) An electronic device according to claim 47 wherein said electronic device is a still camera. ### Claim 52 (depends on 47) An electronic device according to claim 47 wherein said electronic device is a portable phone. ### Claim 53 (depends on 47) An electronic device according to claim 47 wherein said insulating film comprises an organic resin film having a leveled upper surface.