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US 6,242,349 B1Granted
Method of forming copper/copper alloy interconnection with reduced electromigration
AssigneeAdvanced Micro Devices, Inc.
InventorsTakeshi Nogami, Sergey Lopatin, Young-Chang Joo
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Abstract
The electromigration of a Cu or Cu alloy interconnection member is reduced by annealing the seed layer before electroplating or electroless plating the Cu or Cu alloy interconnection member on the seed layer. Embodiments include depositing a Cu or Cu alloy seed layer, annealing at about 100° C. to about 400° C. to increase the grain size of the seed layer and impart a (111)-dominant crystallographic option before plating the Cu or Cu alloy interconnect member thereon the seed layer
Claims16
A method comprising:
- depositing a seed layer having an as-deposited first grain size;
- annealing the seed layer to increase its grain size to a second grain size greater than the first grain size;
- and
- electroplating or electroless plating copper (Cu) or a Cu alloy on the annealed seed layer.
1 more element
Dependencies are inferred from the claim text.