Net strain reduction in integrated laser-modulator

Abstract

A semiconductor device including first and second epitaxial layers grown in a selective area growth region on a substrate includes an active layer or well layer comprising a first composition formed using a trimethylgallium precursor material and a barrier layer comprising a second composition formed using a triethylgallium precursor material. The use of the first and second compositions in the well layer and barrier layer respectively maximizes the strain in the well layer while simultaneously minimizing the net strain of the selective area growth region.

Dependencies are inferred from the claim text.