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US 6,239,440 B1Granted
Arc chamber for an ion implantation system
AssigneeThermoceramix Inc.
InventorRichard C. Abbott
Life of this patent
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Abstract
The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.
Claims16
An ion source comprising:
- a gaseous boron source attached to an arc chamber, the gaseous boron source providing boron ions within the arc chamber, the arc chamber including a boron housing element having an aperture such that a beam of ions can be directed through the aperture, a cathode within the boron housing element that provides electrons, the boron housing element comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron.
A method of generating ions comprising the steps of:
- providing an ion source including a gaseous boron material that is introduced into a boron arc chamber, the boron arc chamber comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron;
- generating a beam of ions within the boron arc chamber;
- and
- directing the beam of ions along a beam path with an electric field through an aperture in the chamber.
1 more element
An ion source comprising:
- a gaseous boron source attached to an arc chamber, the gaseous boron source providing boron ions within the arc chamber, the arc chamber including a boron housing element and an aperture such that a beam of ions can be directed through the aperture, a cathode within the boron housing element that provides electrons, the boron housing element comprising an amorphous material with a density in a range between 80% and 100% of a maximum density of pure boron.
Dependencies are inferred from the claim text.