Method of making a density multiplier for semiconductor device manufacturing

A method of manufacturing a semiconductor device in a manufacturing system that includes a lithography system, the method comprising:

• (a) forming a second layer of a semiconductor material on a first layer of semiconductor material;
• (b) forming a layer of photoresist on the second layer of semiconductor material;
• (c) forming at least one pattern in the layer of photoresist having at least one dimension less than a minimum dimension achievable by the lithography system, whereby portions of the second layer of semiconductor material are exposed;
• (d) etching the exposed portions of the second layer of semiconductor material down to the first layer of semiconductor material;
• (e) removing the layer of photoresist, whereby structures of the second layer of semiconductor material remain on a surface of the first layer of semiconductor material;
• and
• (f) forming structures made of a third semiconductor material on the surface of the first layer of semiconductor material between the structures of the second layer of semiconductor material that remain on the surface of the first layer of semiconductor material, whereby a density of structures on the surface of the first layer of semiconductor material is increased.