US 6,238,946 B1 · Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing

Abstract

This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.

Claims8

Dependent claims

An integrated circuit resonator device of single crystal silicon comprising:

a) a substrate including a top surface single crystal silicon layer, and an intermediate layer of SiO2 formed thereon;
b) a conductive contact formed at said surface silicon layer for receiving an input electrical signal;
c) an open well structure formed in said silicon surface, said well having a bottom surface conductive layer connecting said input contact;
and,
d) a resonator structure formed at said surface silicon layer and lying across said well structure below the silicon surface, wherein an input signal is capacitively coupled from said bottom surface conductive layer to said resonator structure to enable vibration of said resonator device in a vertical direction at a desired frequency of vibration, said structure lying below the silicon surface allowing further processing of the integrated circuit.

2 more elements

Dependencies are inferred from the claim text.

Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing

Life of this patent

Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing

Life of this patent

Abstract

Claims8