Polycrystalline, metallic sputtering target
AssigneeJohnson Matthey Electronics, Inc.
InventorVladimir Segal
Life of this patent
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Abstract
Described is a polycrystalline, metallic sputtering target with a minimum of statically crystallized grain size difference in grain size at any location of less than about ±3%, as well as a dispersion in orientation content ratio of textures of less than about ±4% at any location.
Claims30
A polycrystalline, metallic sputtering target having about the minimum of statically recrystallized grain size, a difference in grain size at any location of no more than about b 3% and a dispersion in orientation content ratio of textures of no more than about 4%.
A polycrystalline, metallic sputtering target having a dispersion in orientation content ratio of textures of no more than about 4%.
A polycrystalline, metallic sputtering target having no more than a 3% dispersion in average grain size, and no more than a 4% dispersion in orientation content ratio of textures.
Dependencies are inferred from the claim text.