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US 6,236,773 B1Granted
Single wavelength semiconductor laser with grating-assisted dielectric waveguide coupler
AssigneeTexas Instruments Incorporated
InventorsJerome K. Butler, Lily Y. Pang, Gary A. Evans
Life of this patent
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Abstract
A grating (18) couples the waveguide region (36) of a semiconductor laser (11) to a dielectric waveguide (26). The waveguide region of the laser includes a mirror (15) at one end thereof and an absorber (19) at the other end thereof. The dielectric waveguide includes a reflector (24) therein to reflect a portion of the light coupled from the laser to the dielectric waveguide back into the laser waveguide region.
Claims5
An integrated circuit comprising:
- a semiconductor laser, wherein said semiconductor laser includes an active region, a semiconductor waveguide region, and a first reflector;
- a dielectric waveguide coupled to said semiconductor laser by a grating;
- and
- a second reflector in said dielectric waveguide to feed back light front said dielectric waveguide to said semiconductor laser;
- wherein said first reflector is disposed at a region of said semiconductor waveguide region remote from said dielectric waveguide, thereby feeding back light through said active region toward said dielectric waveguide;
- and
- said semiconductor laser does not include a reflector disposed at a region of said semiconductor waveguide region proximate said dielectric waveguide.
4 more elements
A method of forming an integrated circuit which comprises the steps of:
- (a) providing a semiconductor laser having an active region and a semiconductor waveguide region;
- (b) disposing a first reflector at one terminal region of said semiconductor waveguide region and an absorber in said semiconductor waveguide region remote from said reflector, without disposing another reflector between said active region and said absorber;
- (c) providing a dielectric waveguide;
- and
- (d) coupling said dielectric waveguide to said semiconductor waveguide with a grating, said grating disposed proximate the semiconductor waveguide region between the absorber and the active region.
2 more elements
Dependencies are inferred from the claim text.