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US 6,236,274 B1Granted
Second harmonic terminations for high efficiency radio frequency dual-band power amplifier
AssigneeIndustrial Technology Research Institute
InventorShih-Ping Liu
Life of this patent
Estimating the term…
Abstract
A high efficiency dual-band RF power amplifier has an output and/or input of a high frequency transistor well terminated at the second harmonic frequency for dual-band operation. Diode switches or voltage controlled varactors implement dual-band resonators such that they can offer low impedance at the second harmonic of each frequency band, while, in some cases, presenting high impedance at the fundamental frequency as an RF choke circuit.
Claims21
A high efficiency dual-band RF power amplifier comprising:
- a power transistor having an input and an output;
- a dual-band input impedance matching circuit connected to the input of said power transistor for providing input impedance matching for said RF power amplifier at two desired fundamental frequency bands;
- a dual-band output impedance matching circuit connected to the output of said power transistor for providing output impedance matching for said RF power amplifier at two desired fundamental frequency bands;
- and
- a combined dual-band bias circuit and second harmonic frequency termination circuit connected to one or both of the output and the input of said power transistor for providing an RF choke at a fundamental wave frequency and for providing a low impedance at a second harmonic frequency with respect to the fundamental wave frequency of each band.
2 more elements
A high efficiency dual-band RF power amplifier comprising:
- a power transistor having an input and an output;
- a dual-band input impedance matching circuit connected to the input of said power transistor for providing input impedance matching for said RF power amplifier at two desired fundamental frequency bands;
- a dual-band output impedance matching circuit connected to an output of said power transistor for providing output impedance matching for said RF power amplifier at two desired fundamental frequency bands;
- and
- a dual-band second harmonic frequency termination circuit connected to one of the output and the input of said power transistor for setting a low impedance for a second harmonic frequency with respect to a fundamental wave frequency of each band.
2 more elements
Dependencies are inferred from the claim text.