Using FET switches for large memory arrays
AssigneeIntel Corporation
InventorsBrian P. Johnson, Dave Freker
Life of this patent
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Abstract
The present invention discloses a method and apparatus for interfacing a memory array to a memory controller using a field-effect transistor (FET) switch. The memory controller has a bus which comprises a plurality of signal lines. The memory array is coupled to the memory controller. The memory array is divided into N groups of memory devices; each group has K memory devices. K memory devices in each of the N groups share memory signal lines. The FET switch couples the bus to one of the N groups of the shared memory signal lines at different times in response to a switch control indication.
Claims20
An apparatus comprising:
- a memory controller having a bus, the bus comprising a plurality of signal lines, the memory controller controlling a memory array, the memory array being divided into N groups of memory devices, each group having K memory devices, K memory devices in each of the N groups sharing memory signal lines;
- and
- a bi-directional field-effect transistor (FET) switch for switching connection between the bus and at least one of the N groups of the shared memory signal lines at different times in response to a switch control indication during a turn-around time of the K memory devices.
A method for interfacing a memory array to a memory controller, the memory controller having a plurality of signal lines forming a bus, the memory array being divided into N groups of memory devices, each group having K memory devices, K memory devices in each of the N groups sharing memory signal lines, the method comprising:
- generating a switch indication to a bi-directional field-effect transistor (FET) switch;
- and
- switching the bi-directional FET switch to connect the signal lines to one of the N groups of shared memory signal lines, corresponding to groups of K memory devices that form the memory array, coupled to the signal lines by the FET switch, in response to a switch control indication during a turn-around time of the K memory devices.
Dependencies are inferred from the claim text.