Liquid crystal display and fabrication method

A method for fabricating a liquid crystal display, the method comprising:

• providing a first transparent substrate;
• forming a first transparent conductive layer on the first transparent substrate;
• forming a first metal film on the first transparent conductive material;
• patterning the first metal film such that said first transparent conductive layer is exposed, to form a plurality of gate bus lines and a common signal line;
• patterning the first transparent conductor to form a plurality of second electrodes;
• forming a gate insulator on the resulting structure including the gate bus lines, common signal lines, and second electrodes;
• forming a channel layer on a selected portion of the gate insulating layer;
• forming a second transparent conductive layer on the gate insulator;
• patterning the second transparent conductive layer to overlap with the second electrode, to form a plurality of first electrodes;
• depositing a second metal film on the gate insulating layer and then patterning the second metal film to form a plurality of data bus lines, sources and drains;
• and
• forming a first alignment layer on the resultant structure.

A method for fabricating a liquid crystal display, the method comprising:

• providing a first transparent substrate;
• forming a first transparent conductive layer on the first transparent substrate;
• patterning the first transparent conductive layer to form a plurality of second electrodes;
• forming a first metal film on the first transparent conductive layer;
• patterning the first metal film to form a plurality of gate bus lines and a common signal line such that the common signal line is contact with each of the second electrodes;
• forming a gate insulating layer on the resultant structure including the gate bus lines, the common signal line, and the second electrodes;
• forming a channel layer on a selected portion of the gate insulating layer;
• forming a second transparent conductive layer on the gate insulating layer;
• patterning the second transparent conductive layer to overlap with the second electrode, to form a plurality of first electrodes;
• depositing a second metal film on the gate insulating layer and then patterning the second metal film, to form a plurality of data bus lines, sources and drains;
• and
• forming a first alignment layer on the resultant structure,
• wherein the forming a first metal film on the first transparent conductive layer and patterning the first metal film to form a plurality of gate bus lines and a common signal line, is exchangeable with the forming a first transparent conductive layer on the first transparent substrate and patterning the first transparent conductive layer to form a plurality of second electrodes.