Covered sealed pressure transducers and method for making same

A sealed semiconductor transducer, comprising:

• a diaphragm having a portion of which defines an active region and a portion of which defines an inactive region, said diaphragm having a top surface;
• a first isolation layer disposed on said top surface of said diaphragm, said first isolation layer overlying both said active region and said inactive region of said diaphragm, said first isolation layer having a top surface;
• a network layer disposed on said top surface of said first isolation layer, said network layer having stress sensing means disposed over said active region of said diaphragm, contact means disposed over said inactive region of said diaphragm, and interconnection means for coupling said stress sensing means to said contact means, wherein said first isolation layer dielectrically isolates said stress sensing means, said contact means, and said interconnection means from said diaphragm and wherein said network layer in combination with said first isolation layer forms a surface with an uneven topography;
• a second isolation layer disposed on said network layer, said second isolation layer conforming to said surface with an uneven topography, said second isolation layer having a top surface;
• a layer of semiconductor material having first and second opposing surfaces, said first opposing surface disposed on said top surface of said second isolation layer at least over said inactive portion of said diaphragm, said second opposing surface being planar, said second isolation layer dielectrically isolating said network layer from said layer of semiconductor material;
• a third isolation layer disposed on said second opposing planar surface of said layer of semiconductor material, and
• a borosilicate glass cover member bonded to said third isolation layer over said inactive region of said diaphragm for sealing said stress sensing means.