Method of producing a thin layer of semiconductor material
AssigneeCommissariat a l'Energie Atomique
InventorsBernard Aspar, Michel Bruel, Thierry Poumeyrol
Life of this patent
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Abstract
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
Claims30
A method of producing a thin layer of semiconductor material from a wafer of the material having a face, comprising the steps of
- subjecting the semiconductor wafer to implantation with a rare gas or hydrogen for producing, at a depth within the volume of the wafer, an implanted layer parallel to the face and separating the wafer into an upper region intended to constitute the thin layer and a lower region constituting a remainder part of the wafer;
- subjecting the wafer to a thermal treatment so as to embrittle the wafer along the layer of implantation;
- and
- applying, during or after the thermal treatment, a mechanical energy to the wafer sufficient to separate the upper and lower regions from each other along the embrittled layer.
A method of forming a thin semiconductor layer comprising:
- providing a semiconductor substrate having a face surface;
- forming a reference plane in the semiconductor substrate having a first bond energy, wherein the reference plane defines a thin layer in the semiconductor substrate extending from the face surface to the reference plane;
- bonding an applicator to the face surface to form a bond interface having a second bond energy;
- and
- applying energy, such that the level at the reference plane is greater than the first bond energy and the level at the bond interface is less than the second bond energy, to fracture the reference plane between the thin layer and the semiconductor substrate.
Dependencies are inferred from the claim text.