Semiconductor wafer evaluation method
AssigneeOki Electric Industry Co., Ltd.
InventorLiu Guo Lin
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Abstract
The semiconductor wafer evaluation method of the present invention comprises the steps of: preparing a substrate embedded with an oxide film; removing the oxide film from a surface of the substrate so as to expose a silicon layer; removing silicon portions within the silicon film and the embedded oxide film by etching so as to form holes within the embedded oxide layer in a first etching step; removing the silicon substrate below the holes by etching in a second etching step; and measuring and evaluating the holes enlarged by the first and second etching steps.
Claims20
A semiconductor wafer evaluation method comprising the steps of:
- preparing a substrate embedded with an oxide film;
- removing the oxide film from a surface of the substrate so as to xpose a silicon layer;
- removing silicon portions within the silicon film and the embedded oxide film by etching so as to form holes within the embedded oxide layer in a first etching step;
- removing part of the silicon substrate below the holes by etching in a second etching step;
- and
- counting and evaluating the holes enlarged by the first and second etching steps.
A semiconductor wafer evaluation method comprising the steps of:
- preparing a substrate embedded with an oxide film;
- removing the oxide film from a surface of the substrate so as to expose a silicon layer;
- carrying out polishing so as to remove the silicon layer and expose the embedded oxide film;
- removing silicon portions within the embedded oxide film so as to form holes within the embedded oxide layer in a first etching step;
- removing part of the silicon substrate below the hole by etching in a second etching step;
- and
- measuring and evaluating the holes enlarged by the first and second etching steps.
A semiconductor wafer evaluation method comprising the steps of:
- preparing a substrate embedded with an oxide film;
- removing the oxide film from a surface of the substrate so as to expose a silicon layer;
- removing the silicon layer and exposing the embedded oxide film;
- measuring withstand voltage characteristic values at a prescribed number of points of a region including the enlarged holes using mercury probe techniques;
- and
- detecting A mode withstand voltage defects and B mode withstand voltage defects occurring within the embedded oxide film using the measuring results.
Dependencies are inferred from the claim text.