Surface emitting semiconductor laser, its producing method and surface emitting semiconductor laser array
AssigneeFuji Xerox Co., Ltd.
InventorYasuji Seko
Life of this patent
Estimating the term…
Abstract
A surface emitting semiconductor laser comprises a semiconductor multilayer reflecting film of a first conductivity type, a quantum well active layer having at least one quantum well structure, a semiconductor multilayer reflecting film of a second conductivity type and a contact layer of the second conductivity type sequentially stacked in a layered manner inside a concavity formed on a surface of a semiconductor substrate. The contact layer of the second conductivity type is formed in a buried manner so that the surface of the contact layer is approximately flush with the surface of the semiconductor substrate. A second electrode is formed on a part of the surface of the contact layer other than a part left for forming a light guiding region thereon.
Claims11
A surface emitting semiconductor laser array comprising:
- a plurality of concavities defined by a bottom surface of a predetermined area and sloped surfaces, which has a profile in such a manner that an area of an opening is larger toward the surface side from the bottom, said concavities being formed on a surface of a semiconductor substrate of a first conductivity type and two-dimensionally arrayed thereon, the bottom surface being completely surrounded by adjacent sloped surfaces;
- a plurality of surface emitting semiconductor lasers are formed in a buried manner in which a contact layer of the first conductivity type, a semiconductor multilayer reflecting film of the first conductivity type, a quantum well active layer having at least one quantum well structure, a semiconductor multilayer reflecting film of a second conductivity type, and a continuous contact layer of the second conductivity type are sequentially stacked in a layered manner in each of the concavities, a contact layer of the second conductivity type being buried in each concavity so that a surface of the contact layer of the second conductivity type is approximately flush with the surface of the semiconductor substrate;
- each of said contact layer of the first conductivity type located in a depth and made to reach the surface of part of the semiconductor substrate around the concavity while connected with a first electrode on the surface of said semiconductor substrate;
- said contact layer of the second conductivity type located at the surface of stacked layers in each concavity and connected to a second electrode formed on a part of the surface of the contact layer of the second conductivity type, other than a part left for forming a light guiding region;
- and
- said first and second electrodes of each surface emitting semiconductor laser respectively connected with an interconnection pattern on the surface of the substrate.
A method of producing a surface emitting semiconductor laser comprising:
- forming a concavity on a substrate, said concavity having a bottom surface completely surrounded by sloped surfaces;
- forming a semiconductor multilayer reflecting film of a first conductivity type;
- forming a quantum well active layer having at least a quantum well structure;
- forming a semiconductor multilayer reflecting film of a second conductivity type;
- forming a continuous contact layer of the second conductivity type, said films and layers being sequentially stacked in a layered manner inside the concavity formed on a surface of a semiconductor substrate and said contact layer of the second conductivity being embedded so that the surface thereof is substantially flush with the surface of said semiconductor substrate;
- and
- forming a second electrode on a part of the surface of said contact layer of the second conductivity type located at the surface of stacked layers in the concavity other than a part left for forming a light guiding region thereon.
Dependencies are inferred from the claim text.