US 6,221,769 B1 · Method for integrated circuit power and electrical connections via through-wafer interconnects

Abstract

A method for providing a through wafer connection to an integrated circuit silicon package. A hole is first created in the silicon package with an inner surface area extending from the bottom surface of the silicon package to the top surface of the silicon package. The hole is created by one of two methods. The first involves mechanical drilling with a diamond bit rotated at a high rate of speed. The second involves ultrasonically milling utilizing a slurry and steel fingers. The inner surface area of the hole is covered with an insulating material to insulate the conductive material which is later deposited and to serve as a diffusion barrier, then a seed material is placed in the hole. Finally, the hole is filled with a conductive material which is utilized to provide large power inputs or signaling connections to the integrated circuit chips.

Claims22

Dependent claims

A method for making a semiconductor material carrier with electrical connections extending directly through said semiconductor material carrier, said method comprising the steps of:

mechanically creating a hole completely through said semiconductor material carrier, said hole defining an inner surface extending from a first planar surface of said carrier to a second planar surface of said carrier;
insulating said inner surface of said hole utilizing an insulating material that also serves as a diffusion barrier;
depositing a seed material in said hole;
plating said semiconductor material carrier to deposit conductive material on to said inner surface of said hole to extend from said first to said second planar surfaces of said semiconductor material carrier;
and
removing any excess deposited conductive material from said first and second planar surface.

3 more elements

A method for providing electrical power supply and external connections directly through a semiconductor substrate, said method comprising the steps of:

mechanically creating a hole in said semiconductor substrate, said hole defining an inner surface extending from a bottom surface of said semiconductor substrate to a top surface of said semiconductor substrate;
insulating said inner surface of said hole utilizing an insulating material that also serves as a diffusion barrier;
depositing a seed material in said hole;
plating said semiconductor substrate to deposit conductive material on to said inner surface of said hole to extend from the top surface to the bottom surface of the semiconductor substrate;
removing any excess deposited conductive material from said top and bottom surface;
coupling said conductive material to an integrated circuit chip;
and
connecting said conductive material with other electronic components including an electrical power unit.

5 more elements

Dependencies are inferred from the claim text.

Method for integrated circuit power and electrical connections via through-wafer interconnects

Life of this patent

Method for integrated circuit power and electrical connections via through-wafer interconnects

Life of this patent

Abstract

Claims22