Back to results
US 6,221,700 B1Granted
Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities
AssigneeDenso Corporation
InventorsEiichi Okuno, Jun Kojima
Life of this patent
Estimating the term…
Abstract
A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while disposing the impurities at lattice positions of the crystal structure. As a result, a surface channel layer is formed with a high activation rate of the impurities.
Claims9
A method of manufacturing a semiconductor apparatus having a silicon carbide semiconductor layer, comprising:
- forming an amorphous layer in contact with the silicon carbide semiconductor layer, the amorphous layer being doped with n type or p type impurities;
- and
- crystallizing the amorphous layer through a solid-phase growth to be an impurity layer having a specific crystal structure while disposing the impurities at lattice positions of the crystal structure, wherein the amorphous layer is formed only by implanting the impurities thereinto.
A method of manufacturing a semiconductor apparatus having a silicon carbide semiconductor layer, comprising:
- forming an amorphous layer in contact with the silicon carbide semiconductor layer, the amorphous layer being doped with n type or p type impurities, wherein forming the amorphous layer includes implanting the impurities into a specific region of the silicon carbide semiconductor layer and implanting ions, a kind of which is different from that of the impurities, into the specific region to make the specific region amorphous;
- and
- crystallizing the amorphous layer through a solid-phase growth to be an impurity layer having a specific crystal structure while disposing the impurities at lattice positions of the crystal structure, wherein the kind of ions is a mixture of silicon and carbon having contents approximately equal to each other.
A method of manufacturing a semiconductor apparatus having a silicon carbide semiconductor layer, comprising:
- forming an amorphous layer in contact with the silicon carbide semiconductor layer, the amorphous layer being doped with n type or p type impurities;
- and
- crystallizing the amorphous layer through a solid-phase growth to be an impurity layer having a specific crystal structure while disposing the impurities at lattice positions of the crystal structure, wherein a width of a forbidden band of the impurity layer is narrower than that of the silicon carbide semiconductor layer.
A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor layer on a main surface of a semiconductor substrate, the semiconductor layer and the semiconductor substrate being made of silicon carbide with a first conductive type, the semiconductor layer having a value of resistance larger than that of the semiconductor substrate;
- forming a second conductive type base region in a surface portion of the semiconductor layer;
- forming an impurity implantation layer in a surface portion of the base region by implanting first conducive type impurities into the surface portion;
- implanting ions, a kind of which is different from that of the first conductive type impurities, into the impurity implantation layer to make the impurity implantation layer amorphous;
- forming a first conductive type surface channel layer having a specific crystal structure by crystallizing the amorphous impurity implantation layer at a solid-phase while disposing the impurities at lattice positions of the crystal structure;
- forming a first conductive type source region in a surface portion of the base region in contact with the surface channel layer, at a depth shallower than that of the base region;
- forming a gate electrode on the surface channel layer with a gate insulation film interposed therebetween;
- forming a source electrode in contact with the base region and the source region;
- and
- forming a drain electrode on a back surface of the semiconductor substrate.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor layer on a main surface of a semiconductor substrate, the semiconductor layer and the semiconductor substrate being made of silicon carbide with a first conductive type;
- the semiconductor layer having a value of resistance larger than that of the semiconductor substrate forming an impurity implantation layer in a surface portion of the semiconductor layer by implanting second conducive type impurities into the surface portion;
- implanting ions, a kind of which is different from that of the second conductive type impurities, into the impurity implantation layer to make the impurity implantation layer amorphous, wherein the kind of ions is a mixture of silicon and carbon having contents approximately equal to each other;
- forming a second conductive type base region having a specific crystal structure by crystallizing the amorphous impurity implantation layer at a solid-phase while disposing the impurities at lattice positions of the crystal structure;
- forming a first conductive type surface channel layer on the base region;
- forming a first conductive type source region in a surface portion of the base region in contact with the surface channel layer, at a depth shallower than that of the base region;
- forming a gate electrode on the surface channel layer with a gate insulation film interposed therebetween;
- forming a source electrode in contact with the base region and the source region;
- and
- forming a drain electrode on a back surface of the semiconductor substrate.
7 more elements
A method of manufacturing a semiconductor apparatus having a silicon carbide semiconductor layer, comprising:
- forming an amorphous layer in contact with the silicon carbide semiconductor layer, the amorphous layer being doped with n type or p type impurities;
- and
- crystallizing the amorphous layer through a solid-phase growth to be an impurity layer having a specific crystal structure while disposing the impurities at lattice positions of the crystal structure, wherein a width of a forbidden band of the base region is narrower than that of the semiconductor layer.
A method of manufacturing a semiconductor apparatus having a silicon carbide semiconductor layer, comprising:
- forming an amorphous layer in contact with the silicon carbide semiconductor layer, the amorphous layer being doped with n type or p type impurities, wherein forming the amorphous layer includes implanting the impurities into a specific region of the silicon carbide semiconductor layer and implanting ions, a kind of which is different from that of the impurities, into the specific region to make the specific region amorphous;
- and
- crystallizing the amorphous layer through a solid-phase growth to be an impurity layer having a specific crystal structure while disposing the impurities at lattice positions of the crystal structure, wherein the kind of ions is hydrogen.
Dependencies are inferred from the claim text.