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US 6,218,640 B1Granted
Atmospheric pressure inductive plasma apparatus
AssigneeTimeDomain CVD, Inc.
InventorSimon I. Selitser
Life of this patent
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Abstract
An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
Claims7
A method of processing a semiconductor device with a thermal plasma, comprising the steps of:
- providing one or more inductive thermal plasma torches, each including one or more tubes, and a coil surrounding said one or more tubes;
- generating a thermal plasma with temperature of greater than 4000° K. in thermal or quasi-thermal equilibrium from one or more gases that pass through said one or more tubes, said plasma extending from a top surface of said plasma torches;
- and
- contacting the semiconductor device in close proximity to the plasma torch, with the semiconductor device and the plasma torch moving laterally relative to one another, such that the plasma processes the surface of said semiconductor device without damaging the semiconductor device.
1 more element
Dependencies are inferred from the claim text.