US 6,218,288 B1 · Multiple step methods for forming conformal layers

Abstract

A two-step formation process provides conformal coverage at both the bottom surface and one or more side walls of an opening for various applications, e.g., high aspect ratio contact liners or storage cell capacitor electrode applications, and provides conformal coverage on any features requiring such coverage. A method for forming a conformal layer in the fabrication of integrated circuits includes providing a substrate assembly including at least a generally horizontal first surface and a second surface extending therefrom. A first portion of the layer is formed selectively on the horizontal first surface during a first period of time and a second portion of the layer is deposited selectively on the second surface during a second period of time. Further, one illustrative process for forming tungsten nitride in the fabrication of integrated circuits includes forming tungsten nitride on the horizontal first surface during a first period of time and depositing tungsten nitride on the second surface during a second period of time by plasma enhanced chemical vapor deposition. The tungsten nitride may be formed on the first surface by plasma enhanced chemical vapor deposition using a first reactant gas mixture including WF6, at least one of NF3 and N2, and H2 with the tungsten nitride being deposited on the second surface by plasma enhanced chemical vapor deposition using a second reactant gas mixture including WF6, at least one of NF3 and N2, H2, and He.

Claims53

Dependent claims

A method for forming a conformal layer of tungsten nitride in the fabrication of integrated circuits, the method comprising:

providing a substrate assembly including at least a generally horizontal first surface and a second surface extending therefrom;
forming a first portion of the tungsten nitride layer selectively on the horizontal first surface during a first period of time;
and
depositing a second portion of the tungsten nitride layer selectively on the second surface during a second period of time wherein the second period of time is different from the first period of time and, wherein depositing the second portion of the layer selectively on the second surface includes providing a reactant gas mixture and subjecting the reactant gas mixture to a glow discharge created by applying an electromagnetic field across the reactant gas mixture.

1 more element

A method for forming a conformal layer of tungsten nitride in an opening defined by a bottom surface and at least one side wall extending therefrom, the method comprising:

depositing tungsten nitride on at least the bottom surface by chemical vapor deposition using a first gas mixture including WF6, at least one of NF3 and N2, and H2, wherein depositing tungsten nitride on at least the bottom surface includes subjecting the first gas mixture to a glow discharge created by applying an electromagnetic field across the first gas mixture;
and
depositing tungsten nitride on at least the side wall by chemical vapor deposition using a second gas mixture including WF6, at least one of NF3 and N2, H2, and He, wherein depositing tungsten nitride on at least the side wall includes subjecting the second gas mixture to a glow discharge created by applying an electromagnetic field across the second gas mixture.

Dependencies are inferred from the claim text.

Multiple step methods for forming conformal layers

Life of this patent

Multiple step methods for forming conformal layers

Life of this patent

Abstract

Claims53