Method for adding plasma treatment on bond pad to prevent bond pad staining problems

A method of plasma treatment to prevent bond-pad staining comprising the steps of:

• providing a semiconductor wafer having a substructure comprising devices formed in said substrate, and insulating and metal layers formed thereon, including metal bonding-pads on the uppermost layer;
• depositing a layer of dielectric material over said semiconductor wafer including said metal bonding-pads;
• forming a passivation layer over said dielectric material;
• forming a photoresist mask having bonding-pad patterns over said passivation layer corresponding to underlying said metal bonding-pads;
• forming openings in said passivation layer and in said dielectric layer through said bonding-pad patterns in said photoresist mask over said metal bonding-pads;
• removing said photoresist mask, and
• performing plasma treatment of said metal bonding-pads through said openings;
• forming a passivation film on said bonding-pads;
• performing color filter process;
• and
• dicing chips from said wafer, bonding wires on said metal bonding-pads on said chips, and packaging said chips.