Method and apparatus of establishing a region to be made amorphous
AssigneeNEC Corporation
InventorHironori Sakamoto
Life of this patent
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Abstract
In a method of accurately determining an area that has been changed to an amorphous state which uses a computer simulation of a semiconductor manufacturing process, the impurity concentration at the crystalline-amorphous boundary is taken as the parameter C. The value obtained by dividing the implanted ion concentration obtained by means of an ion implantation simulator by the parameter Ca is defined as the amorphous conversion ratio parameter, and a region in which this amorphous conversion ratio parameter is 1 or greater is taken to be an area that is converted to an amorphous state.
Claims9
A method of establishing, by utilizing a computer simulation of a semiconductor device manufacturing process, a region that has become amorphous, said method comprising the steps of:
- determining an impurity concentration at an interface formed between a crystal and an amorphous region, as a parameter Cα;
- determining an ion implantation concentration of an ion of said impurity concentration which is implanted thereinto by utilizing said computer simulation;
- defining an amorphous conversion ratio parameter Rα as said ion implantation concentration divided by said parameter Cα;
- and
- locating said amorphous region by determining said region that has been converted to an amorphous state at the time of ion implantation, as a region in which said amorphous conversion ratio parameter Rα is at least 1.
An apparatus, for establishing a region that has become amorphous by utilizing a computer simulation device of a semiconductor device manufacturing process, said apparatus comprising:
- a device for measuring an impurity concentration at an interface formed between a crystal region and an amorphous region, and determining said measured impurity concentration thereat as a parameter Cα;
- a device for simulating an ion implantation concentration of an ion of said impurity concentration which is implanted thereinto by utilizing a computer;
- a device for calculating a value of ratio obtained from said ion implantation concentration divided by said parameter Cα, and determining said ratio as an amorphous conversion ratio parameter Rα;
- and
- a device for locating said amorphous region by determining a region in which said amorphous conversion ratio parameter Rα thereof is at least 1, as a region that has been converted to an amorphous state at the time of ion implantation amorphous state at the time of ion implantation.
Dependencies are inferred from the claim text.