Method for recording a binary word by means of electrically erasable and programmable type memory cells
AssigneeInside Technologies
InventorJacek Kowalski
Life of this patent
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Abstract
The present invention relates to a method for recording a binary word (BW) by means of electrically erasable and programmable type memory cells (Ci,j) organized in word lines (Wli), in which there are provided at least two word lines (WLi, XWLi) that can be erased or programmed independently of each other, the binary word is recorded in one of said word lines (XWLi) and, simultaneously, the other word line (XWLi) is erased. The invention is applied to the making of a memory system (10), a binary counter and an abacus counter that are secured.
Claims11
Method for recording a binary word (BW) in a memory (30, CPT1, CPT2) comprising electrically erasable and programmable memory cells (Ci,j) organized in word lines (WL, XWL), characterized in that the word lines are organized to form a main memory zone (MEM) and an auxiliary memory zone (XMEM2) in parallel with the main memory zone, the auxiliary memory zone comprising a number of word lines (XWM) smaller than the number of word lines (Wli) of the main memory zone, and in that it comprises:
- a first recording step comprising the steps of selecting a word line (Wli) in the main memory zone (MEM), selecting an auxiliary word line (XWL) in the auxiliary memory zone, recording the binary word in the auxiliary word line (XWL) and simultaneously erasing the word line (Wli) selected in the main memory zone, and
- a second recording step comprising the steps of recording the binary word in the erased word line (Wli) selected in the main memory zone and simultaneously erasing the auxiliary word line (XWL).
Memory (30) comprising word lines (Wli) arranged in such a way as to form a first memory zone and a second memory zone in parallel, and means for writing a binary word (BW) arranged for selecting, upon reception of a signal for writing the binary word, a word line in one of the memory zones and recording the binary word in the selected word line, characterized in that:
- the first memory zone is a main memory zone (MEM) that is accessible line by line by the application of an address (ADR) to an address decoder (DEC2),
- the second memory zone is an auxiliary memory zone (XMEM2) comprising a number of word lines (XWM) smaller than the number of word lines (Wli) of the main memory zone (MEM), the number of word lines of the auxiliary memory zone being at least equal to 1.
Dependencies are inferred from the claim text.