EEPROM and method for triggering the EEPROM
AssigneeInfineon Technologies AG
InventorsGeorg Georgakos, Martin Bloch, Kai Kasprick, Thomas Kern, Jürgen Peter, Thomas Piorek
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Abstract
An EEPROM with two-transistor memory cells with source-side selection, and a method for triggering such a EEPROM are described. The EEPROM and the method are distinguished in that the programming voltage required to program a memory cell is delivered via a source line. As a result the EEPROM can be protected in a simple way against unintended loss of the data stored in it.
Claims6
An EEPROM, comprising:
- a plurality of memory cells each having a memory transistor with a drain terminal and a selection transistor with a source terminal connected in series with said memory transistor;
- a selection line connected to said selection transistor;
- a control line connected to said memory transistor;
- a bit line connected to said drain terminal of said memory transistor;
- a source line connected to said source terminal of said selection transistor, said plurality of memory cells being programmable, readable and erasable via said selection line, said control line, said bit line and said source line;
- and
- a control unit connected to said source line for delivering a programming voltage required for programming said plurality of memory cells via said source line.
An improved method for triggering an EEPROM having a plurality of memory cells which are programmable, readable and erasable via a selection line, a control line, a bit line and a source line, each of the plurality of memory cells having a memory transistor and a selection transistor connected in series with the memory transistor, and a drain terminal of the memory transistor connected to the bit line and a source terminal of the selection transistor connected to the source line, the improvement which comprises:
- delivering a programming voltage required for programming the plurality of memory cells via the source line.
Dependencies are inferred from the claim text.