Capacitor including barium strontium titanate film
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsFusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
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Abstract
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.
Claims15
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising a liquid organometallic compound of titanium dissolved in a first solution comprising, as a solvent, tetrahydrofuran, and a second solution in which the organometallic compounds of barium and strontium are dissolved in tetrahydrofuran.
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising three solutions, the solutions respectively including an organometallic compound of barium of strontium, and of titanium dissolved in tetrahydrofuran.
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising a liquid organometallic compound of titanium, and a liquid solution of organometallic compounds of barium and of strontium dissolved in tetrahydrofuran.
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising first and second liquid solutions respectively including an organometallic compound of barium and of strontium dissolved in tetrahydrofuran and further including a liquid organometallic compound of titanium.
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material comprising a solution of organometallic compounds containing barium strontium, and titanium dissolved in a solvent including tetrahydrofuran.
Dependencies are inferred from the claim text.