Method for testing semiconductor device and semiconductor device with transistor circuit for marking
AssigneeNEC Corporation
InventorYasumitsu Oki
Life of this patent
Estimating the term…
Loading patent…
AssigneeNEC Corporation
InventorYasumitsu Oki
Estimating the term…
A transistor circuit for marking is provided at a semiconductor chip. This circuit includes a P-type MOS transistor and an N-type MOS transistor connected in series between a power supply pad and a ground pad, the first inverter connected to a test signal terminal and having an output terminal connected to a drain of the N-type MOS transistor and the second inverter into which an output signal of the first inverter is inputted and an output terminal of which is connected to a drain of the P-type MOS transistor. If a chip functional test is performed and the chip is determined as a defective, then a signal inputted to the terminal is turned into a high level to cause latch-up to occur to the marking transistor circuit and the transistor is damaged, whereby the marking transistor circuit can be visually identified. As a result, it is possible to ensure identify a defective chip and to prevent adversely affecting adjacent chips.
A method for testing a semiconductor device comprising the steps of:
A semiconductor device comprising:
Dependencies are inferred from the claim text.