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US 6,211,570 B1Granted
Semiconductor device having a multilayer interconnection structure
AssigneeFujitsu Limited
InventorKatsumi Kakamu
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Abstract
A semiconductor device includes a F-doped interlayer insulation film and a high-refractive index insulation film having a refractive index higher than a refractive index of the F-doped interlayer insulation film, such that the high-refractive index insulation film is disposed at least one of a top side and a bottom side of the F-doped interlayer insulation film.
Claims7
A semiconductor device, comprising:
- a substrate;
- an interconnection pattern formed above said substrate;
- a F-doped interlayer insulation film covering said interconnection pattern;
- and
- a high-refractive index insulation film having a refractive index higher than a refractive index of said F-doped interlayer insulation film, said high-refractive index insulation film being disposed at least one of a top side and a bottom side of said F-doped interlayer insulation film.
2 more elements
Dependencies are inferred from the claim text.