Electromigration resistant metallization structures and process for microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold
AssigneeTelefonaktiebolaget LM Ericsson (publ)
InventorSam-Hyo Hong
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Abstract
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 μm, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
Claims24
An interconnection on a semiconductor device, said interconnection comprising:
- an insulating layer on a silicon substrate;
- a contact hole in said insulating layer to expose a portion of said substrate;
- a PtSi layer in said contact hole directly in contact with said substrate;
- a TiW layer in said contact hole directly in contact with said PtSi layer;
- a TiW(N) layer in said contact hole directly in contact with said TiW layer;
- and
- an Au layer in said contact hole directly in contact with said TiW(N) layer;
- wherein the interconnections have a metal pitch of 1.5 μm or less.
An interconnection on a semiconductor device, said interconnection comprising:
- an insulating layer on a silicon substrate;
- a contact hole in said insulating layer to expose a portion of said substrate;
- a PtSi layer in said contact hole directly in contact with said substrate;
- a TiW layer in said contact hole directly in contact with said PtSi layer;
- a TiW(N) layer in said contact hole directly in contact with said TiW layer;
- and
- an Au layer in said contact hole on said TiW(N) layer.
An interconnection on a semiconductor device, said interconnection comprising:
- an insulating layer on a silicon substrate;
- a contact hole in said insulating layer to expose a portion of said substrate;
- a PtSi layer in said contact hole directly in contact with said substrate;
- a TiW layer in said contact hole directly in contact with said PtSi layer;
- a TiW(N) layer in said contact hole directly in contact with said TiW layer;
- a first Au layer in said contact hole directly in contact with said TiW(N) layer;
- and
- a second Au layer directly in contact with said first Au layer, wherein said second Au layer is physically different from said first Au layer.
Dependencies are inferred from the claim text.