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US 6,211,561 B1Granted
Interconnect structure and method employing air gaps between metal lines and between metal layers
AssigneeConexant Systems, Inc.
InventorBin Zhao
Life of this patent
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AssigneeConexant Systems, Inc.
InventorBin Zhao
Estimating the term…
An interconnect structure and fabrication method are provided to form air gaps between interconnect lines and between interconnect layers. A conductive material is deposited and patterned to form a first level of interconnect lines. A first dielectric layer is deposited over the first level of interconnect lines. One or more air gaps are formed in the first dielectric layer to reduce inter-layer capacitance, intra-layer capacitance or both inter-layer and intra-layer capacitance. At least one support pillar remains in the first dielectric layer to promote mechanical strength and thermal conductivity. A sealing layer is deposited over the first insulative layer to seal the air gaps. Via holes are patterned and etched through the sealing layer and the first dielectric layer. A conductive material is deposited to fill the via holes and form conductive plugs therein. Thereafter, a conductive material is deposited and patterned to form a second level of interconnect lines.
An interconnect structure comprising:
An interconnect structure comprising:
An interconnect structure comprising:
An interconnect structure comprising:
An interconnect structure comprising:
An interconnect structure comprising:
Dependencies are inferred from the claim text.