Symmetric magnetic tunnel device

A symmetric magnetic tunnel device comprising:

• a first magnetic tunnel junction including a pinned magnetic layer, an insulating tunnel layer and a free magnetic layer stacked in parallel juxtaposition to allow tunneling of electrons through the insulating tunnel layer between the pinned and free magnetic layers;
• a second magnetic tunnel junction including a pinned magnetic layer, an insulating tunnel layer and a free magnetic layer stacked in parallel juxtaposition to allow tunneling of electrons through the insulating tunnel layer between the pinned and free magnetic layers;
• the first and second magnetic tunnel junctions being positioned in parallel juxtaposition so as to form a continuous electron path through the first and second magnetic tunnel junctions and to provide a cell signal across the first and second magnetic tunnel junctions greater than a cell signal across each of the first and second magnetic tunnel junctions individually,
• wherein the cell signal across the first and second magnetic tunnel junctions is greater than 30 mv.

A symmetric magnetic tunnel device for providing a signal comprising:

• a substrate;
• a first electrical contact positioned on the substrate;
• a first pinned magnetic layer positioned on the contact layer;
• a first insulating tunnel layer positioned on the first pinned magnetic layer;
• a free magnetic layer positioned on the first insulating tunnel layer;
• a second insulating tunnel layer positioned on the free magnetic layer;
• a second pinned magnetic layer positioned on the second insulating layer;
• and
• a second electrical contact positioned in electrical communication with the second pinned magnetic layer, the signal provided across the first and second electrical contacts and being greater than signals appearing across the first and second insulating tunnel layers,
• the first and second pinned magnetic layers each having a magnetization oriented in the plane of the first and second pinned magnetic layers, respectively, and pointing in the same direction as each other, and the free magnetic layer having a magnetization oriented in the plane of the free magnetic layer and moveable to one of pointing in either the same or opposite directions as the magnetizations of the first and second pinned magnetic layers.

A symmetric magnetic tunnel device for providing a signal comprising:

• a substrate;
• a first electrical contact positioned on the substrate;
• a first pinned magnetic layer positioned on the contact layer;
• a first insulating tunnel layer positioned on the first pinned magnetic layer;
• a free magnetic layer positioned on the first insulating tunnel layer;
• a second insulating tunnel layer positioned on the free magnetic layer;
• a second pinned magnetic layer positioned on the second insulating layer;
• and
• a second electrical contact positioned in electrical communication with the second pinned magnetic layer, the signal provided across the first and second electrical contacts and being greater than signals appearing across the first and second insulating tunnel layers,
• the first and second pinned magnetic layers each having a magnetization oriented in the plane of the first and second pinned magnetic layers, respectively, and parallel to each other, and the free magnetic layer having a magnetization oriented in the plane of the free magnetic layer and moveable to one of parallel and anti-parallel to the magnetizations of the first and second pinned magnetic layers,
• wherein a cell signal between the first and second electrical contacts is greater than 30 mv.