Backmetal drain terminal with low stress and thermal resistance
AssigneeIntersil Corporation
InventorsThomas Eugene Grebs, Rodney Sylvester Ridley, Sr., Jeffrey P. Spindler, Joseph Leonard Cumbo, Jeffrey Edward Lauffer
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.
Claims14
A semiconductor device comprising a silicon substrate comprising a drain region, said substrate having disposed at an upper surface a source region and a gate and on a lower surface a backmetal drain terminal, wherein said drain terminal comprises a stack comprising a first layer consisting essentially of tantalum and an outermost second layer consisting essentially of copper.
Dependencies are inferred from the claim text.