Memory cell layout for reduced interaction between storage nodes and transistors

A memory chip layout comprising:

• trenches formed in a substrate;
• active areas formed in the substrate, the active areas including diffusion regions for forming transistors for accessing storage nodes in the trenches;
• a plurality of wordlines disposed substantially parallel to each other, the wordlines having a width and being spaced apart by a substantially same distance, the transistors each including a gate formed by the wordlines, the wordlines defining a first axis wherein a first portion of each active area extends transversely from below the wordline to a trench disposed below an adjacent wordline;
• and
• the trenches having a side closest to the first portions of the active areas, the side closest to the trench being angularly disposed relative to the wordlines such that a distance between the wordline and the side closest to the trench for a trench disposed below and adjacent wordlines is greater than the substantially same distance between the wordlines.

A memory chip layout comprising:

• trenches formed in a substrate;
• active areas formed in the substrate, the active areas including diffusion regions for forming transistors for accessing storage nodes in the trenches;
• a plurality of wordlines disposed substantially parallel to each other, the wordlines having a width and being spaced apart by a substantially same distance, the transistors each including a gate formed by the wordlines, the wordlines defining a first axis wherein a first portion of each active area extends transversely from below the wordline to a trench disposed below an adjacent wordline;
• the trenches having a side closest to the first portions of the active areas, the side closest to the first portions being angularly disposed relative to the wordlines such that a distance between a wordline and a side closest to the first portions for a trench, disposed below an adjacent wordline, is greater than the substantially same distance between the wordlines;
• and
• the active areas defining a second axis which forms an angle with the wordlines and extends below two adjacent wordlines to connect to trenches at ends of the active area, the trenches disposed below the two adjacent wordlines having at least on side being aligned in a substantially parallel orientation relative to the second axis.