Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor
AssigneeSeiko Instruments Inc.
InventorsHiroshi Takahashi, Nobuhiro Shimizu, Yoshiharu Shirakawabe, Susumu Ichihara, Michel Despont
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Abstract
A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.
Claims27
A semiconductor strain sensor comprising:
- a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end;
- and a Schottky junction disposed on the surface portion of the semiconductor cantilever probe and positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion.
In a scanning probe microscope for observing the surface of a sample, a semiconductor strain sensor comprising:
- a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end;
- and a Schottky junction disposed on the surface portion of the semiconductor cantilever probe and positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion.
A semiconductor strain sensor comprising:
- a cantilever having a fixed end portion and an arm portion extending from the fixed end portion, the arm portion having a free end for undergoing flexural displacement;
- and a Schottky junction disposed on the arm portion of the cantilever;
- wherein when the free end of the arm portion of the cantilever is subjected to flexural displacement, the amount of displacement of the free end is detected on the basis of a change in an electrical characteristic of the Schottky junction.
Dependencies are inferred from the claim text.