Semiconductor device having improved crystal orientation

An active matrix electro-optical device comprising:

• a plurality of thin film transistors arranged in a direction over a substrate for constituting at least a part of an active matrix region, each of said thin film transistors comprising:
• a semiconductor film comprising crystalline silicon having at least a source region, a drain region, a channel region and a pair of lightly doped impurity regions;
• and
• a gate electrode adjacent to said channel region with an insulating film interposed between said gate electrode and said channel region,
• wherein said semiconductor film comprises (111), (220) and (311) planes, and ratio of a reflection intensity of the (111) plane to sum of reflection intensities of the (111), (220) and (311) planes amounts to larger than 90%.

An active matrix electro-optical device comprising:

• a gate line extending in a direction over a substrate;
• a plurality of thin film transistors arranged in said direction over said substrate for constituting at least a part of an active matrix region, each of said thin film transistors comprising:
• a semiconductor film comprising crystalline silicon having at least a source region, a drain region, a channel region and a pair of lightly doped impurity regions;
• and
• a gate electrode adjacent to said channel region with an insulating film interposed between said gate electrode and said channel region, said gate electrode connected with said gate line,
• wherein said semiconductor film comprises (111), (220) and (311) planes, and ratio of a reflection intensity of the (111) plane to sum of reflection intensities of the (111), (220) and (311) planes amounts to larger than 90%.

An active matrix electro-optical device comprising:

• a source line extending in a direction over a substrate;
• a plurality of thin film transistors arranged in said direction over said substrate for constituting at least a part of an active matrix region, each of said thin film transistors comprising:
• a semiconductor film comprising crystalline silicon having at least a source region, a drain region, a channel region and a pair of lightly doped impurity regions wherein one of the source region and the drain region is connected to said source line;
• and
• a gate electrode adjacent to said channel region with an insulating film interposed between said gate electrode and said channel region,
• wherein said semiconductor film comprises (111), (220) and (311) planes, and ratio of a reflection intensity of the (111) plane to sum of reflection intensities of the (111), (220) and (311) planes amounts to larger than 90%.