Method of manufacturing a semiconductor device
AssigneesSemiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
InventorsYoshitaka Yamamoto, Hideomi Suzawa, Katunobu Awane, Fumiaki Funada, Shunpei Yamazaki
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Abstract
Method of forming an active layer for TFTs without plasma-damaging the side surfaces of the active layer. The method is started with forming a crystalline silicon film on a glass substrate. A resist mask is placed on the silicon film. The silicon film is etched with an etchant gas consisting mainly of a halogen fluoride gas, thus forming the active layer. During this process, the etchant gas is not changed into a plasma to prevent the side surfaces of the active layer from being plasma-damaged. ClF3 can be used as the halogen fluoride gas.
Claims45
An active matrix type display device having at least a pixel region over a substrate, said pixel region comprising:
- at least an insulating film comprising silicon nitride and formed on said substrate;
- a semiconductor film comprising silicon and formed over said insulating film, said semiconductor film having at least a channel region, a source region, and a drain region;
- a gate electrode formed adjacent to said semiconductor film with a gate insulating film interposed therebetween;
- a plurality of interlayer films formed over said semiconductor film said gate electrode, one of said interlayer films comprising silicon nitride;
- an electrode connected to one of said source and drain regions, said electrode formed under said one of said interlayer films comprising silicon nitride;
- and
- a pixel electrode formed over said interlayer film comprising silicon nitride.
An active matrix type display device having at least a pixel region over a substrate, comprising:
- a plurality of insulating films formed on said substrate, one of said insulating films comprising silicon nitride;
- a semiconductor film comprising silicon and formed over said silicon nitride film, said semiconductor film having at least a channel region, a source region, and a drain region;
- a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween;
- an electrode connected to one of said source and drain regions;
- at least an interlayer film comprising silicon nitride and formed over said semiconductor film, said gate electrode, and said electrode;
- and
- a pixel electrode over said interlayer insulating film comprising silicon nitride.
An active matrix type display device having at least a pixel region formed over a substrate, said pixel region comprising:
- a plurality of insulating films formed on said substrate, one of said insulating films comprising silicon nitride;
- a semiconductor film comprising silicon and formed over said silicon nitride film, said semiconductor film having at least a channel region, a source region, and a drain region;
- a gate electrode formed adjacent to said semiconductor film with a gate insulating film interposed therebetween;
- a plurality of interlayer films formed over said semiconductor film and said gate electrode, one of said interlayer films comprising silicon nitride;
- a source electrode formed under said one of interlayer films comprising silicon nitride;
- and
- a pixel electrode connected to said semiconductor film formed over said interlayer film comprising silicon nitride.
An active matrix type display device having at least a pixel region formed over a substrate, comprising:
- a plurality of insulating films formed on said substrate, said insulating films having a silicon nitride and a silicon oxide film;
- a semiconductor film comprising silicon and formed over said silicon nitride film, said semiconductor film having at least a channel region, a source region, and a drain region;
- a gate electrode formed adjacent to said semiconductor film with a gate insulating film interposed therebetween;
- a plurality of interlayer films formed over said gate electrode, said interlayer films having a silicon nitride film and a silicon oxide film;
- an electrode connected to one of said source and drain regions and formed under said interlayer film comprising silicon nitride;
- and
- a pixel electrode formed over said interlayer film comprising silicon nitride.
An active matrix type display device having at least a pixel region formed over a substrate, said pixel region comprising:
- a first insulating film comprising silicon nitride and formed on said substrate;
- a second insulating film comprising silicon oxide and formed on said first insulating film;
- a semiconductor film comprising silicon formed on said second insulating film, said semiconductor film having at least a channel region, a source region, and a drain region;
- a gate insulating film on said semiconductor film;
- a gate electrode on said gate insulating film;
- a first interlayer film comprising silicon oxide formed over said gate electrode;
- a source electrode formed over said first interlayer film, said source electrode connected to said semiconductor film through a contact hole formed in said first interlayer film;
- a second interlayer film comprising silicon nitride formed over said first interlayer film;
- and
- a pixel electrode formed over said second interlayer film and electrically connected to said semiconductor film.
Dependencies are inferred from the claim text.