Electron beam drawing method in which cell projection manner and variably shaped beam manner are used in combination
AssigneeNEC Corporation
InventorTakao Tamura
Life of this patent
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Abstract
Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.
Claims16
An electron beam drawing method in which a cell projection manner and a varibly shaped beam exposure are used in combination, the method comprising:
- deciding whether a pattern region in which a pattern is drawn in a resist comprises a first region to be drawn in a cell projection manner or a second region to be drawm in a variably shaped beam exposure manner with a variable shaping deflector;
- selecting a first exposure dose if said pattern region comprises said first region or a second exposure dose if said pattern region comprises said second region, said second exposure dose being different from said first exposure dose;
- and
- adjusting an exposure dose prior to beam irradiation and based on a calculation regarding the pattern region selected such that said pattern is drawn with said first exposure dose in said first region and said pattern is drawn with said second exposure dose in said second region.
An electron beam drawing method that uses a cell projection manner and a variably shaped beam exposure manner, the method comprising:
- determining whether a pattern region in which a pattern is drawn comprises a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam exposure manner with a variable shaping deflector;
- selecting a first exposure dose if said pattern region comprises said first region or selecting a second exposure dose if said pattern region comprises said second region;
- and
- adjusting an exposure dose prior to beam irradiation and based on a calculation regarding the pattern region selected such that said pattern is drawn with said first exposure dose in said first region and said pattern is drawn with said second exposure dose in said second region.
Dependencies are inferred from the claim text.