Method for device editing
AssigneeFEI Company
InventorClive D. Chandler
Life of this patent
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Abstract
A method for making connections to conductors buried under dielectrics layers using a focused ion beam and an etch-assisting gas is described. The method uses a halogenated hydrocarbon, such as 2, 2, 2-trifluoroacetamide, to enhance etching of the dielectric while attenuating etching of the conductor once expose. The method thereby allows a via to be milled to contact the conductor without substantial etching and degrading the conductor.
Claims22
A method of establishing a connection to a conductor under a dielectric material in an integrated circuit fabricated on a substrate, comprising:
- directing a halogenated hydrocarbon gas toward an area on the substrate above the conductor,
- directing an ion beam toward the area of the substrate to mill a hole in the dielectric to expose the conductor, and
- depositing a conductive material in the hole in the dielectric to electrically contact the conductor.
A method of establishing a connection within an integrated circuit between two conductors buried under dielectric materials, comprising:
- directing a halogenated hydrocarbon gas toward a first area on a substrate above a first conductor;
- directing an ion beam toward the first area to mill a first hole in a dielectric material to expose the first conductor;
- directing a halogenated hydrocarbon gas toward a second area on the substrate above a second conductor;
- directing an ion beam toward the second area of the substrate to mill a second hole in a dielectric material to expose the second conductor;
- depositing a conductive material in the first and second holes in the dielectric materials to electrically contact the first and second conductor;
- and
- depositing a conductive material to electrically connect the first and second conductors through the conductive materials deposited in the first and second holes.
Dependencies are inferred from the claim text.