Electron beam fault detection of semiconductor devices
AssigneeLSI Logic Corporation
InventorNicholas F. Pasch
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Abstract
An E-beam generator and detector arrangement sends an electron beam through a series of differentially evacuated vacuum chambers of small size to detect faulty circuitry in individual semiconductor devices. The vacuum chambers are open to one end and are sealed by the semiconductor device without contacting the vacuum chambers. A laser generator is operated by a control system with the E-beam generator and detector arrangement to provide a laser beam in a known physical relationship to the electron beam to correct detected faulty circuitry in the semiconductor devices. The E-beam generator and detector arrangement confirms the correction without further handling of the semiconductor device.
Claims10
Apparatus for fault detection in semiconductor devices, comprising:
- an electron beam generator and secondary electron detector arrangement requiring a vacuum to operate;
- a first chamber open at one end and connected to said electron beam generator and secondary electron detector at the other;
- a second chamber disposed around said first chamber and open at one end;
- a first pump mechanism connected to said second chamber for evacuating said second chamber;
- a second pump mechanism connected to said first chamber for evacuating said first chamber to the vacuum required by said electron beam generator and detector arrangement to operate and a harder vacuum than in said second chamber;
- a semiconductor device carrier for movably positioning the semiconductor device in close proximity with said open ends of said first and second chambers whereby the semiconductor device seals said first and second chambers without contacting said open ends of said first and second chambers;
- a control system for placing the semiconductor device in a characterize state;
- and
- said control system including a probe pad system connecting said control system with the semiconductor device, said probe pad system being disposed outside said second chamber around the perimeter of the semiconductor device whereby said control system places the semiconductor device in the characterize state through said probe pad system.
Apparatus for fault detection is semiconductor devices, comprising:
- an electron beam generator and secondary electron detector arrangement requiring a vacuum to operate;
- a first chamber open at one end and connected to said electron beam generator and secondary electron detector at the other;
- a second chamber disposed around said first chamber and open at one end;
- a first pump mechanism connected to said second chamber for evacuating said second chamber;
- a second pump mechanism connected to said first chamber for evacuating said first chamber to a harder vacuum than said second chamber;
- a third chamber open at one end and disposed around said second chamber;
- a third pump mechanism for evacuating said third chamber to a softer vacuum than in said first and second chambers whereby a vacuum is provided for operation of said electron beam generator and secondary electron detector arrangement;
- and
- a semiconductor device carrier for positioning the semiconductor device in close proximity with said open ends of said first and second chambers whereby the semiconductor device seals said first, second, and third chambers without contacting said open ends of said first, second, and third chambers;
- a control system for providing signals to place the semiconductor device in a characterize state;
- and
- said control system including a probe pad system connecting said control system with the semiconductor device, said probe pad system being disposed outside said second chamber around the perimeter of the semiconductor device whereby said control system places the semiconductor device in the characterize state through said probe pad system.
Dependencies are inferred from the claim text.